| Autor: |
Yukihiko Takagaki, Yoshihiko Yuba, Kenji Gamo, Kazuo Murase, Takao Shiokawa, Takeshi Kakuta, Fujio Wakaya, Sadao Takaoka, Susumu Namba |
| Rok vydání: |
1990 |
| Předmět: |
|
| Zdroj: |
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8:1794 |
| ISSN: |
0734-211X |
| DOI: |
10.1116/1.585161 |
| Popis: |
GaAs/GaAlAs quantum wires with a new type of side gates are fabricated. The gate electrodes are made of two‐dimensional electron gas (2DEG) and defined by Ar ion beam etching (IBE) or Ga focused ion beams (FIB) in the heterostructure wafers. The geometrical width of the conduction channel and the side gate is about 0.5–1.5 μm, and the side gate is separated by about 0. 5 μm from the conduction channel. It was observed that negative gate voltage could completely deplete the conduction channel, and, from Shubnikov–de Haas oscillation measurements, that both carrier density, and effective wire decreased with increasing the negative gate voltage. It is found that the FIB process can simplify the process steps, but induce more damage in the narrow channel than the Ar IBE process. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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