| Autor: |
Klavs F. Jensen, Rajesh Venkataramani, Seth T. Rodgers |
| Rok vydání: |
1998 |
| Předmět: |
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| Zdroj: |
Current Opinion in Solid State and Materials Science. 3:562-569 |
| ISSN: |
1359-0286 |
| DOI: |
10.1016/s1359-0286(98)80026-0 |
| Popis: |
Advances have been made in multiscale modeling strategies for thin film growth by physical and chemical vapor deposition techniques. Considerable efforts have been devoted in the past decade to develop physical models and simulation strategies within each length and time-scale regime. As a result of this progress, it has become feasible to construct thin film growth model spanning length scale from the atomic level to process equipment size. Examples include chemical vapor deposition of diamond and GaAs. Two major areas of length scale-linking activitiesare firstly, macro- to microscale (depositon system to film morphology); and secondly, micro- to atomic scale (film morphology to atomic level description of reaction processes). |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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Full Text from ScienceDirect