SONOS-Type Flash Memory with HfO2 Thinner than 4 nm as Trapping Layer Using Atomic Layer Deposition
| Autor: | Jae Sub Oh, Hi Deok Lee, Young-Su Kim, J. G. Park, Ga-Won Lee, Sung Kyu Lim, Kwang Il Choi, Minho Kang, Dong Eun Yoo, Myeong Ho Song |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
business.industry Annealing (metallurgy) technology industry and agriculture Trapping complex mixtures Flash memory Electronic Optical and Magnetic Materials law.invention Non-volatile memory Atomic layer deposition law Electronic engineering Optoelectronics sense organs Electrical and Electronic Engineering Crystallization business High-κ dielectric |
| Zdroj: | IEICE Transactions on Electronics. :590-595 |
| ISSN: | 1745-1353 0916-8524 |
| DOI: | 10.1587/transele.e93.c.590 |
| Popis: | A HfO2 as the charge-storage layer with the physical thickness thinner than 4nm in silicon-oxide-high-k oxide-oxide-silicon (SOHOS) flash memory was investigated. Compared to the conventional silicon-oxide-nitride-oxide-silicon (SONOS) flash memory, the SOHOS shows the slow operational speed and exhibits the poorer retention characteristics. These are attributed to the thin physical thickness below 4nm and the crystallization of the HfO2 to contribute the lateral migration of the trapped charge in the trapping layer during high temperature annealing process. |
| Databáze: | OpenAIRE |
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