59.9 mV·dec Subthreshold Swing Achieved in Zinc Tin Oxide TFTs With In Situ Atomic Layer Deposited AlO Gate Insulator

Autor:	Tonglin L. Newsom, Christopher R. Allemang, Tae H. Cho, Neil P. Dasgupta, Rebecca L. Peterson
Rok vydání:	2023
Předmět:	Electrical and Electronic Engineering Electronic Optical and Magnetic Materials
Zdroj:	IEEE Electron Device Letters. 44:72-75
ISSN:	1558-0563 0741-3106
DOI:	10.1109/led.2022.3219351
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::511eb49d7ab12d7febcc7325f97ab02a https://doi.org/10.1109/led.2022.3219351 Zobrazit plný text záznamu