Flux Dependence of the Ag/Si(111) Growth

Autor:	M. C. Tringides, K. R. Roos
Rok vydání:	1993
Předmět:	Materials science Transition metal Diffusion General Physics and Astronomy Physical chemistry Flux Crystal growth Activation energy Epitaxy Thermal diffusivity Vacuum evaporation
Zdroj:	Europhysics Letters (EPL). 23:257-262
ISSN:	1286-4854 0295-5075
DOI:	10.1209/0295-5075/23/4/004
Popis:	We have studied the initial stages ((1 ÷ 2) ML) of the growth of Ag on Si(111) as a function of temperature T and deposition rate F to identify the operating diffusion mechanism. The specular beam intensity at 150 K shows short-lived oscillations which depend on the total amount of Ag deposited, irrespectively of the deposition rate, and suggest the absence of thermal diffusion at this low temperature. Growth studies at higher temperatures T ≥ 473 K, monitoring the formation of the √3 × √3 R30° structure as a function of deposition rate, measure a non-thermal component R0 > 50 A to the diffusion length. The temperature dependence of the √3 growth is used to measure an activation energy Ed = (0.24 ± 0.05) eV.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::5111bb7789f14e87ff09e0d745db2a7f https://doi.org/10.1209/0295-5075/23/4/004 Zobrazit plný text záznamu