Metal-assisted chemical etching of silicon and achieving pore sizes as small as 30 nm by altering gold thickness
| Autor: | Shams Mohajerzadeh, Arash Kheyraddini Mousavi, Mahmoud Behzadirad, Yaser Silani, Behnam Kheyraddini Mousavi, Farshid Karbasian |
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| Rok vydání: | 2019 |
| Předmět: |
Fabrication
Materials science Morphology (linguistics) Silicon Scanning electron microscope business.industry 010102 general mathematics chemistry.chemical_element 02 engineering and technology Surfaces and Interfaces 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Isotropic etching Surfaces Coatings and Films Metal Nanopore chemistry visual_art visual_art.visual_art_medium Optoelectronics Wafer 0101 mathematics 0210 nano-technology business |
| Zdroj: | Journal of Vacuum Science & Technology A. 37:061402 |
| ISSN: | 1520-8559 0734-2101 |
| Popis: | Metal-assisted chemical etching is applied to fabricate deep, high aspect ratio nanopores in silicon. The authors’ simple and cost-effective fabrication process has proven capable of generating nanopores with diameters as small as 30 nm, over the whole wafer surface (50.8 mm in diameter). The process uses a thin layer of DC-sputtered gold and H 2 O 2 / H 2 O / HF treatment to generate Au nanoislands. The formation of these nanoislands is confirmed by scanning electron microscopy. In this paper, the authors study the effect of Au-layer thickness on the diameter and morphology of the fabricated nanopores. The resulting structures have wide applications in optical sensing and filtering. |
| Databáze: | OpenAIRE |
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