Substrate-removed flip-chip photodiode array based on InAsSbP/InAs double heterostructure

Autor:	M A Remennyi, A. A. Klimov, A.A. Usikova, S. A. Karandashev, A.A. Lavrov, R. E. Kunkov, B. A. Matveev, T. S. Lukhmyrina
Rok vydání:	2019
Předmět:	History Materials science business.industry law Optoelectronics Substrate (printing) Double heterostructure business Flip chip Computer Science Applications Education Photodiode law.invention
Zdroj:	Journal of Physics: Conference Series. 1410:012028
ISSN:	1742-6596 1742-6588
DOI:	10.1088/1742-6596/1410/1/012028
Popis:	N-InAsSbP/InAs/P-InAsSbP double heterostructures have been grown onto n+-InAs substrate and further processed into 2×2 photodiode array containing no n+-InAs. C-V, spectral response as well as mid-IR photoluminescence and electroluminescence in the 77-300 K temperature range have been measured and used for photodiode characterization including D*(λ) and BLIP temperature evaluation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::50f477f0c96ebf5dfeec135364c77c0a https://doi.org/10.1088/1742-6596/1410/1/012028 Zobrazit plný text záznamu