The Roles of Several E′ Variants in Thermal Gate Oxide Reliability

Autor:	Patrick M. Lenahan, T. J. Morthorst, R. K. Lowry, John F. Conley, H. L. Evans
Rok vydání:	1994
Předmět:	Materials science business.industry Charge (physics) Trapping medicine.disease_cause Corona law.invention law Gate oxide Thermal medicine Optoelectronics Thin film Electron paramagnetic resonance business Ultraviolet
Zdroj:	MRS Proceedings. 338
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-338-37
Popis:	We combine electron spin resonance measurements with vacuum ultraviolet, ultraviolet, and corona bias charge injection schemes to examine the properties and charge trapping roles of three E′ variants in conventionally processed thermally grown thin film SiO2 on Si.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::50ec70c7b2833839681291dc4bce6446 https://doi.org/10.1557/proc-338-37 Zobrazit plný text záznamu Full text from SpringerLink