Electrical behaviour of HgCdTe/Si heterostructures
| Autor: | T.Ya. Gorbach, R. Ciach, S. V. Svechnikov, Petro Smertenko, G. Wisz, Marian Kuzma |
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| Rok vydání: | 2000 |
| Předmět: |
Silicon
Charge carrier injection Analytical chemistry General Physics and Astronomy chemistry.chemical_element Heterojunction Surfaces and Interfaces General Chemistry Substrate (electronics) Conductivity Condensed Matter Physics Surfaces Coatings and Films Pulsed laser deposition Substrate resistivity chemistry Recombination |
| Zdroj: | Applied Surface Science. :495-499 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/s0169-4332(99)00414-6 |
| Popis: | HgCdTe/Si heterostructures (HSs) were obtained by pulsed laser deposition (PLD) on Si (p- or n-type) flat and patterned (pyramid-like and plate-like) substrate from p- or n-type HgCdTe target. The I–V characteristics of p–n and isotype HSs were investigated by the differential approach. This approach is based on monitoring of differential slope α of the I–V characteristics in log–log plot (α=d lgI/d lgV). Influence of the substrate kind (flat, pyramid-like or plate-like), type of conductivity, type of HS (p–n or isotype) and substrate resistivity were studied. In all cases, the main feature of the I–V characteristics behaviour was α=3/2. It means that the bimolecular recombination is the main recombination mechanism in all HSs types. |
| Databáze: | OpenAIRE |
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