Peculiarities of the thermodynamic conditions to grow InGaAs epitaxial layers by LPE on GaAs substrate at low temperatures

Autor:	Andrei Gorbatchev, Francisco De Anda Salazar, Juan Adrián Galván Montalvo, Viatcheslav Michournyi
Rok vydání:	2021
Předmět:	Mechanics of Materials Mechanical Engineering General Materials Science Condensed Matter Physics
Zdroj:	MRS Advances. 6:1005-1009
ISSN:	2059-8521 2731-5894
DOI:	10.1557/s43580-021-00198-8
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::50e77e86ea59e00c214bba0030130559 https://doi.org/10.1557/s43580-021-00198-8 Zobrazit plný text záznamu Full text from SpringerLink