Temperature dependence of intrinsic recombination coefficients in 1.3 μm InAsP/InP quantum-well semiconductor lasers

Autor:	Carmen S. Menoni, J.M. Pikal, G. Y. Robinson, P. Thiagarajan, Henryk Temkin
Rok vydání:	2000
Předmět:	education.field_of_study Physics and Astronomy (miscellaneous) Condensed matter physics Auger effect Chemistry Population Heterojunction Carrier lifetime Auger Semiconductor laser theory symbols.namesake symbols Atomic physics education Quantum well Recombination
Zdroj:	Applied Physics Letters. 76:2659-2661
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.126435
Popis:	In this letter, we report on the temperature dependence of the intrinsic recombination coefficients in long-wavelength quantum-well lasers. Unlike previous studies, we obtain the intrinsic recombination coefficients from carrier lifetime measurements with a correction for the carrier population in the barrier and separate confinement heterostructure region. Our results show that this carrier population not only affects the value of the recombination coefficients obtained but also their temperature dependence. We measure a significant increase in the intrinsic Auger coefficient with temperature indicating that the frequently reported temperature insensitivity of this coefficient is likely due to carriers spilling out of the wells at elevated temperatures and not an intrinsic property of the Auger process.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::50e2bd45aa402bb3f79b231912217a07 https://doi.org/10.1063/1.126435 Zobrazit plný text záznamu