PROPERTIES OF COPPER LAYER ON Si(100) FROM Cu(dmamb)2
| Autor: | Seungmoo Lee, Bum-Joon Kim, Jong Mun Choi, Dongjin Byun, Seong Eon Jin, Tack Mo Chung, Chang Gyoun Kim, Do-Han Lee |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
Diffusion Metallurgy Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Chemical vapor deposition Condensed Matter Physics Copper Buffer (optical fiber) Surfaces Coatings and Films Barrier layer chemistry Electrical resistivity and conductivity Materials Chemistry Layer (electronics) |
| Zdroj: | Surface Review and Letters. 17:307-310 |
| ISSN: | 1793-6667 0218-625X |
| DOI: | 10.1142/s0218625x10013801 |
| Popis: | Cu seed layer was deposited by chemical vapor deposition using new Cu precursor, Cu(dmamb) 2. The Cu layers still need the barrier layer to prevent the diffusion, so Ta and Ti were used for the barrier layer on Si(100) . Low temperature (LT) copper buffer layer was introduced and the effect of the buffer on the Cu films was investigated. The grown Cu layers were analyzed using FESEM, XRD, and four point probe measurement. The Cu seed layers were successfully deposited using Cu(dmamb) 2 precursor. Better thickness uniformity was obtained in the Cu films with the LT Cu buffer, which lowered the electrical resistivity. |
| Databáze: | OpenAIRE |
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