Correlation between ZnO Nanowire Growth and the Surface of AlN Substrate

Autor:	Meoung Whan Cho, Z. Vashaei, In Ho Im, Hyun Jung Lee, Sang Hyun Lee, Takashi Hanada, Takafumi Yao
Rok vydání:	2006
Předmět:	Materials science Scanning electron microscope business.industry Condensation Nanowire Nucleation Mineralogy General Chemistry Substrate (electronics) Condensed Matter Physics law.invention law Etching (microfabrication) Optoelectronics General Materials Science Photolithography business Hillock
Zdroj:	Crystal Growth & Design. 6:2640-2642
ISSN:	1528-7505 1528-7483
DOI:	10.1021/cg060435j
Popis:	Single-crystalline ZnO nanowires are fabricated by thermal chemical vapor transport and condensation on AlN epilayers without employing any metal catalyst. Before the growth of ZnO nanowires, the surface of AlN epilayers was treated by HF solution and then changed to a mixture of flat plane and hillocks according to dipping time. ZnO nanowires along the c-axis direction of hexagonal structures were synthesized only on the HF treated AlN surface. ZnO nanowire arrays have been obtained by selective etching by photolithography process. A mechanism for nanowire growth on modified AlN epilayer is proposed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::50db5d68dcaf1c082cfc2f080a084775 https://doi.org/10.1021/cg060435j Zobrazit plný text záznamu