Intermediate band insertion by group-IIIA elements alloying in a low cost solar cell absorber CuYSe2: A first-principles study
| Autor: | Wenzheng Zhou, Yang Xue, Jingwen Jiang, Jin Guo, Wentong Zhou, Xianqing Liang, Dan Huang, Hua Ning |
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| Rok vydání: | 2019 |
| Předmět: |
Physics
business.industry Band gap Doping General Physics and Astronomy 01 natural sciences 010305 fluids & plasmas Hybrid functional law.invention Semiconductor Group (periodic table) law 0103 physical sciences Solar cell Optoelectronics Direct and indirect band gaps 010306 general physics business Absorption (electromagnetic radiation) |
| Zdroj: | Physics Letters A. 383:1972-1976 |
| ISSN: | 0375-9601 |
| Popis: | By using first-principles calculations based on HSE06 hybrid functional, the structural, electronic, and optical properties of CuYSe2 as a low cost absorber material have been studied. Our results show that CuYSe2 is a semiconductor with indirect band gap of 1.46 eV and optical band gap of 2.00 eV. Especially, an intermediate band has been found in Ga and In alloyed CuYSe2, respectively, which can be served as a stepping stone to optical absorption on low energy photons. Therefore, Ga and In alloyed CuYSe2 with an intermediate band as a new absorber material have been proposed. |
| Databáze: | OpenAIRE |
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