Low Cost GaSb N on P ThermoPhotoVoltaic (TPV) Cells
| Autor: | J. E. Avery, Lewis Fraas, J. Devin MacKenzie, Liangliang Tang |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Fabrication Materials science business.industry chemistry.chemical_element 02 engineering and technology Zinc Electron 021001 nanoscience & nanotechnology 01 natural sciences chemistry Thermophotovoltaic 0103 physical sciences Optoelectronics Wafer Quantum efficiency Diffusion (business) 0210 nano-technology business Transparent conducting film |
| Zdroj: | 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC). |
| DOI: | 10.1109/pvsc40753.2019.8980891 |
| Popis: | Zinc diffused P on N GaSb cells are typically used in TPV systems. However, there are three potential advantages for developing N on P GaSb cells. First, because the minority electron carrier diffusion length in the P type wafer is longer than the hole minority carrier diffusion length in N type wafers, the quantum efficiency near the GaSb band edge will be higher for N on P cells. This is important for TPV systems and demonstrated herein in the first fabricated diffused junction N on P cells. A second potential advantage could be a much simpler fabrication process if a transparent conductive oxide (TCO) N+ layer is used instead. A third advantage could be a built in long wavelength reflecting filter associated with the TCO which would be an efficiency advantage for a TPV system. The development of N on P GaSb cells is described herein. |
| Databáze: | OpenAIRE |
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