X-Ray Mask Distortion Induced in Back-Etching Preceding Subtractive Fabrication: Resist and Absorber Stress Effect

Autor:	Yoh Ichi Yamaguchi, Shuichi Noda, Kazuo Suzuki, Yoshio Yamashita, Takuya Yoshihara, Takao Taguchi, Soichiro Mitsui, Tadashi Matsuo, Tsutomu Shoki, Tsuneaki Ohta, Shinji Tsuboi, Hiroshi Hoga, Katsumi Suzuki
Rok vydání:	1996
Předmět:	Materials science Fabrication business.industry General Engineering General Physics and Astronomy engineering.material Stress (mechanics) Optics Coating Resist Etching (microfabrication) Distortion engineering Wafer X-ray lithography Composite material business
Zdroj:	Japanese Journal of Applied Physics. 35:2845
ISSN:	1347-4065 0021-4922
Popis:	The influence of resist and absorber stress distributions on X-ray mask distortion induced during back-etching preceding subtractive fabrication is analyzed experimentally and simulated. The stress distribution (gradient) in a resist and/or that in an absorber film causes larger pattern displacement rather than the film average stress. Some resists have considerably high stress after coating on a wafer, and this stress also changes during exposure, causing local pattern displacements. However, use of chemically amplified resist systems, in which the reaction after exposure is limited to a small amount acid generation, might solve this problem. Low-stress positive-tone resists should thus be developed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::50c0b9c1272932d3eb6fc7f9da9629bf https://doi.org/10.1143/jjap.35.2845 Zobrazit plný text záznamu