Implantation-enhanced interdiffusion in CdTe/ZnTe quantum wells
| Autor: | Le Si Dang, Joel Cibert, J.L. Pautrat, E. Ligeon, A. Hamoudi |
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| Rok vydání: | 1993 |
| Předmět: |
Materials science
Photoluminescence Annealing (metallurgy) business.industry Mechanical Engineering Analytical chemistry Condensed Matter Physics Cadmium telluride photovoltaics Secondary ion mass spectrometry Secondary Ion Mass Spectroscopy Ion implantation Mechanics of Materials Optoelectronics General Materials Science business Quantum well |
| Zdroj: | Materials Science and Engineering: B. 16:211-214 |
| ISSN: | 0921-5107 |
| DOI: | 10.1016/0921-5107(93)90046-p |
| Popis: | Implantation-enhanced interdiffusion in CdTe/ZnTe quantum wells (QWs) has been studied using photoluminescence and secondary ion mass spectroscopy. In this system, a strong compositional disorder is produced by implantation alone. This is attributed to defect diffusion during the implantation process. The main effect observed after short-time annealing is the recovery of the QW optical properties. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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