On a Pd/InAlAs metamorphic high electron mobility transistor (MHEMT)-based hydrogen sensor
| Autor: | Huey-Ing Chen, Kun-Wei Lin, Wen-Chau Liu, Li-Yang Chen, Chung-Fu Chang, Yaw-Wen Kuo, Po-Shun Chiu, Yi-Jung Liu, Tsung-Han Tsai, Tzu-Pin Chen |
|---|---|
| Rok vydání: | 2009 |
| Předmět: |
Exothermic reaction
Sticking coefficient Hydrogen Chemistry Metals and Alloys Analytical chemistry chemistry.chemical_element Biasing Activation energy Condensed Matter Physics Hydrogen sensor Surfaces Coatings and Films Electronic Optical and Magnetic Materials Threshold voltage Adsorption Materials Chemistry Electrical and Electronic Engineering Instrumentation |
| Zdroj: | Sensors and Actuators B: Chemical. 139:310-316 |
| ISSN: | 0925-4005 |
| DOI: | 10.1016/j.snb.2009.03.042 |
| Popis: | The hydrogen sensing properties of a Pd/InAlAs metamorphic high electron mobility transistor (MHEMT) are investigated. Experimentally, a threshold voltage shift (Δ V th ) of 260 mV is observed upon exposing to a 1% H 2 /air gas. The drain current sensing response ( S R ) shows the strong dependence on the gate bias voltage V GS . A maximum S R of 107% is found at the applied voltage of V GS = −0.5 V. In addition, the temperature behavior of S R is predominantly determined by the hydrogen sticking coefficient and the exothermic reaction of hydrogen adsorption. It is also found that rectification ratio R can be changed with different hydrogen concentrations Furthermore, the response rate analyses reveal that the initial response rate is increased with the hydrogen concentration and temperature. The activation energy E a of 2.88 kJ mol −1 suggests that the studied Pd/InAlAs MHEMT hydrogen sensor has a low barrier for the adsorption of hydrogen. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect