Non-equilibrium impurity diffusion in silicon
| Autor: | L. E. Klyachkin, V. L. Sukhanov, N. T. Bagraev |
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| Rok vydání: | 1991 |
| Předmět: |
Range (particle radiation)
Silicon Dopant Condensed matter physics chemistry.chemical_element Mineralogy Condensed Matter Physics Electronic Optical and Magnetic Materials Monocrystalline silicon chemistry Materials Chemistry Effective diffusion coefficient Electrical and Electronic Engineering Diffusion (business) Boron Layer (electronics) |
| Zdroj: | Semiconductor Science and Technology. 6:577-581 |
| ISSN: | 1361-6641 0268-1242 |
| DOI: | 10.1088/0268-1242/6/7/002 |
| Popis: | Non-equilibrium impurity diffusion of dopants has been realized in monocrystalline silicon through controlled surface injection of self-interstitials and vacancies. By varying the parameters of the surface oxide layer during the boron/phosphorus diffusion process, it was possible to obtain, for the first time, quantum-size diffusion profiles and p-n junctions with dimensions that could be controlled over the 10-220 AA range. |
| Databáze: | OpenAIRE |
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