Transferred-Substrate InP/GaAsSb Heterojunction Bipolar Transistor Technology With ${f}_{\text{max}}$ ~ 0.53 THz
| Autor: | Sebastian Boppel, Viktor Krozer, Ina Ostermay, Ksenia Nosaeva, Colombo R. Bolognesi, M. Matalla, Nicole Volkmer, Olivier Ostinelli, Tom K. Johansen, M. Brahem, Nils Weimann, D. Stoppel |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science Terahertz radiation business.industry Heterojunction bipolar transistor Bipolar junction transistor Transistor 020206 networking & telecommunications 02 engineering and technology Double heterostructure 01 natural sciences Capacitance Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry law 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Indium phosphide Optoelectronics Breakdown voltage Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Electron Devices. 65:3704-3710 |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2018.2854546 |
| Popis: | We report on the realization mymargin of transferred-substrate InP/GaAsSb double heterostructure bipolar transistors in a terahertz monolithic integrated circuit process. Transistors with 0.4- $\mu \text{m}$ -wide single emitters reached unilateral gain cutoff frequencies of around 530 GHz with simultaneous current gain cutoff frequencies above 350 GHz. Extrinsic collector capacitance is effectively reduced in the transfer-substrate process. In combination with the high collector breakdown voltage in the InP/GaAsSb heterobipolar transistor structure of 5 V, this process is amenable to analog power applications at millimeter (mm-wave) and sub-mm-wave frequencies. We demonstrate reliable extraction procedures for unilateral gain and current gain cutoff frequencies. |
| Databáze: | OpenAIRE |
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