A 600V high-side gate drive circuit with ultra-low propagation delay for enhancement mode GaN devices
| Autor: | Sen Zhang, Leng Jing, Yangyang Lu, Weifeng Sun, Jing Zhu, Zhicheng Yu, Shikang Cheng, Yunwu Zhang, Kongsheng Hu |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry 020208 electrical & electronic engineering Mode (statistics) Gallium nitride 02 engineering and technology Integrated circuit Propagation delay 01 natural sciences law.invention chemistry.chemical_compound chemistry law Logic gate 0103 physical sciences MOSFET 0202 electrical engineering electronic engineering information engineering Gate driver Optoelectronics Common-mode signal business |
| Zdroj: | 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD). |
| Popis: | Benefit from the presented new Common Mode Dual-Interlock (CMDI) structure, a 600V high-side gate driver base on norma 0.5μm 600V Bipolar-CMOS-DMOS (BCD) technology achieving the high dV S /dt noise immunity larger than 85V/ns and low propagation delay less than 22ns for enhancement mode gallium nitride (GaN) devices is proposed in this paper. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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