Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems
| Autor: | Robert M. Wallace, Stephen McDonnell, Joungmok Kim, D. M. Zhernokletov, J. M. Hawkins, Hong Dong, Christopher L. Hinkle, Barry Brennan, M. Milojevic, Francisco S. Aguirre-Tostado |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) business.industry Inorganic chemistry Oxide Dielectric Electron spectroscopy Atomic layer deposition chemistry.chemical_compound Semiconductor Chemical engineering X-ray photoelectron spectroscopy chemistry Deposition (phase transition) Thin film business |
| Zdroj: | Applied Physics Letters. 100:141606 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.3700863 |
| Popis: | The Al2O3/GaAs and HfO2/GaAs interfaces after atomic layer deposition are studied using in situ monochromatic x-ray photoelectron spectroscopy. Samples are deliberately exposed to atmospheric conditions and interfacial oxide re-growth is observed. The extent of this re-growth is found to depend on the dielectric material and the exposure temperature. Comparisons with previous studies show that ex situ characterization can result in misleading conclusions about the interface reactions occurring during the metal oxide deposition process. |
| Databáze: | OpenAIRE |
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