Characterization of the Copper‐Poly(tetrafluoroethylene) Interface
| Autor: | Antonio J. Ricco, G. W. Arnold, Robert R. Rye |
|---|---|
| Rok vydání: | 1993 |
| Předmět: |
Materials science
Renewable Energy Sustainability and the Environment Analytical chemistry Nucleation chemistry.chemical_element Condensed Matter Physics Tin oxide Electron spectroscopy Isotropic etching Copper Surfaces Coatings and Films Electronic Optical and Magnetic Materials symbols.namesake chemistry.chemical_compound X-ray photoelectron spectroscopy chemistry Materials Chemistry Electrochemistry symbols Tetrafluoroethylene Rutherford scattering |
| Zdroj: | Journal of The Electrochemical Society. 140:3233-3239 |
| ISSN: | 1945-7111 0013-4651 |
| DOI: | 10.1149/1.2221016 |
| Popis: | Using Rutherford backscattering spectroscopy (RBS) and x-ray photoelectron spectroscopy (XPS), the authors have shown that strong adhesion of electrolessly deposited Cu to etched poly(tetrafluoroethylene) (PTFE) results from penetration of all species (tin oxide from the sensitization step, Pd from the nucleation step, and electrolessly deposited Cu) into the porous, carbon-rich, 3,000 A-deep chemically etched layer. Measurements of the deposited Cu films show a yield strength comparable to commercial Cu-clad PTFE. XPS analysis of both failure surfaces show only C(1s) and F(1s) peaks characteristic of virgin PTFE with a small amount of the C(1s) peak characteristic of etched PTFE. Near-cohesive failure occurs at a depth into the etched layer where bulk PTFE characteristics are approached but at depths greater than those shown from RBS depth profiles to be accessible to Cu penetration. Line-of-sight thermal evaporation of Cu yields Cu RBS depth profiles that are identical to those obtained from electrolessly deposited (isotropic) Cu, suggesting that the structure of the PTFE pores into which the Cu mechanically interlocks is very open, with few convolutions. |
| Databáze: | OpenAIRE |
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