Reversible Fermi Level Tuning of a Sb2Te3 Topological Insulator by Structural Deformation

Autor: Inwoong Hwang, Jimin Chae, Mann Ho Cho, Hyejin Choi, Kwangsik Jeong, Chul Kang, Myung-Ho Bae, Sang Han Park, Tae Hyeon Kim
Rok vydání: 2015
Předmět:
Zdroj: Nano Letters. 15:3820-3826
ISSN: 1530-6992
1530-6984
DOI: 10.1021/acs.nanolett.5b00553
Popis: For three-dimensional (3D) topological insulators that have a layered structure, strain was used to control critical physical properties. Here, we show that tensile strain decreases bulk carrier density while accentuating transport of topological surface state using temperature-dependent resistance and magneto-resistance measurements, terahertz-time domain spectroscopy and density functional theory calculations. The induced strain was confirmed by transmittance X-ray scattering measurements. The results show the possibility of reversible topological surface state device control using structural deformation.
Databáze: OpenAIRE