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The semiconductor film Sb2S3, deposited on the glass and metal substrates, has been used as a recording material when fabricating diffraction gratings by pulse laser irradiation of 0.53 and 1.06 micrometers . The processes of photothermal ablation are the basis for the mechanism of diffraction structure formation. The gratings at spatial frequencies of 100, 500, and 800 mm-1 have been fabricated without postexposure treatment by pulse laser irradiation of 20 and 1000 ns in duration. The diffraction efficiency of the manufactured gratings for different exposure energy densities has been measured.© (1993) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only. |
