Effect of irradiation on the luminescence properties of low-dimensional SiGe/Si(001) heterostructures
| Autor: | D. N. Lobanov, A. V. Novikov, Artem N. Yablonskiy, V. V. Platonov, S. V. Obolenskiy, Z. F. Krasilnik |
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| Rok vydání: | 2010 |
| Předmět: |
Nanostructure
Materials science business.industry Heterojunction Electron Radiation Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Optoelectronics Charge carrier Irradiation Luminescence business Recombination |
| Zdroj: | Semiconductors. 44:329-334 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/s1063782610030103 |
| Popis: | This study is concerned with the effect of irradiation on the luminescence properties of low-dimensional Si/Ge heterostructures with different degrees of spatial localization of charge carriers. It is shown that the radiation stability of Si/Ge heterostructures is improved with increasing efficiency of localization of charge carriers in the structures. The spatial localization of charge carriers in the SiGe nanostructures decreases the probability of nonradiative recombination of charge carriers at radiation defects produced in the Si matrix. It is demonstrated that, among the structures explored in the study, the highest radiation stability of luminescence properties is inherent in the multilayered structures containing self-assembled Ge(Si) nanoislands, in which the most efficient spatial localization of charge carriers is attained. In this case, the localization is three- and two-dimensional, correspondingly, for holes in the islands and for electrons in the Si layers that separate neighboring layers containing the islands. |
| Databáze: | OpenAIRE |
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