| Autor: |
V. A. Starostin, V. V. Beloshitskii, P. A. Aleksandrov, E. K. Baranova, K. D. Demakov |
| Rok vydání: |
1985 |
| Předmět: |
|
| Zdroj: |
Radiation Effects. 88:249-255 |
| ISSN: |
0033-7579 |
| DOI: |
10.1080/00337578608207484 |
| Popis: |
Experimental and theoretical results are presented on Tl-ion implantation into hot silicon substrates (⋍1200°C). a) An anomalously large (by more than an order of magnitude) displacement of the peak position of the implanted impurity distribution into the bulk of the substrate is found. b) The conclusion is drawn that the basic process responsible for this displacement of the peak is radiation-enhanced diffusion (RED) due to nonequilibrium concentration of point defects produced in the heated target directly under implantation. c) The crystalline structure of the resulting ion-implanted layer indicates that in-situ annealing of the exposed layer occurs during high-temperature implantation. d) Experimental impurity distributions confirm the possibility of producing an implanted-impurity “buried layer” below the layer of a single crystal silicon, the “buried layer” depth depending on the implantation regime. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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