Automatic large-signal GaAs HEMT modeling for power amplifier design
| Autor: | A. A. Popov, Aleksandr E. Goryainov, A. S. Salnikov, A. A. Kalentyev, D. V. Bilevich, Igor M. Dobush |
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| Rok vydání: | 2019 |
| Předmět: |
Computer science
Amplifier Transistor 020206 networking & telecommunications 02 engineering and technology High-electron-mobility transistor Signal Power (physics) Gallium arsenide law.invention 03 medical and health sciences Nonlinear system chemistry.chemical_compound 0302 clinical medicine chemistry law Non-linear least squares 0202 electrical engineering electronic engineering information engineering Electronic engineering Electrical and Electronic Engineering 030217 neurology & neurosurgery |
| Zdroj: | AEU - International Journal of Electronics and Communications. 100:138-143 |
| ISSN: | 1434-8411 |
| DOI: | 10.1016/j.aeue.2019.01.008 |
| Popis: | In this paper, a new nonlinear transistor modeling technique for gallium arsenide high-electron mobility transistor (GaAs HEMT) is proposed. The technique includes an analytical extraction, enhanced by applying nonlinear least squares regression and modified-median method, and a multistage optimization, allowing completely automatic large-signal modeling. Convergence of the technique is proved by a threefold model building procedure followed by the comparison of simulated data like IV-curve and load-pull contours. A 0.15 μm GaAs pHEMT nonlinear model was built and verified with measured IV-curve, multiple bias S-parameters and power characteristics. A good agreement with the measured data proves that the proposed technique enables automatic nonlinear transistor modeling for power MMIC amplifier design. |
| Databáze: | OpenAIRE |
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