The Effect of Selectively and Fully Ion-Implanted Collector on RF Characteristics of BJT Devices

Autor:	Jen Yi Su, Guo-Wei Huang, Chinchun Meng, Bo Chen Tsou
Rok vydání:	2006
Předmět:	Materials science business.industry Bicmos process Bipolar junction transistor Electrical engineering Optoelectronics Electrical and Electronic Engineering business Noise (electronics) Capacitance Electronic Optical and Magnetic Materials Ion
Zdroj:	IEICE Transactions on Electronics. :520-523
ISSN:	1745-1353 0916-8524
DOI:	10.1093/ietele/e89-c.4.520
Popis:	A selectively ion-implanted collector (SIC) is implemented in a 0.8μm BiCMOS process to improve the RF characteristics of the BJT devices. The SIC BJT device has better f t and f max than the FIC (fully ion-implanted collector) BJT device because the extrinsic base-collector capacitance is reduced by the SIC process. The I t is 7.8 GHz and f max is 9.5 GHz for the SIC BJT device while the f t is 7.2 GHz and f max is 4.5 GHz for the FIC BJT device when biased at V ce =3.6V and J c =0.07 mA/μm 2 . The noise parameters are the same for both BJT devices but the associated gain is higher for the SIC BJT device.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::508674d32e360ee8a9c1ed1e6495bbd8 https://doi.org/10.1093/ietele/e89-c.4.520 Zobrazit plný text záznamu