Application of 2DHG Diamond p-FET in Cascode With Normally-OFF Operation and a Breakdown Voltage of Over 1.7 kV
| Autor: | Junxiong Niu, Masafumi Inaba, Te Bi, Toshio Sasaki, Hiroshi Kawarada, Nobutaka Oi |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry Transistor chemistry.chemical_element Diamond engineering.material 01 natural sciences Electronic Optical and Magnetic Materials law.invention chemistry law 0103 physical sciences MOSFET engineering Optoelectronics Breakdown voltage Cascode Electrical and Electronic Engineering business Current density Voltage |
| Zdroj: | IEEE Transactions on Electron Devices. 67:4006-4009 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | Hydrogen-terminated (C-H) diamond has a high current density owing to the 2-D hole gas (2DHG) on its C-H diamond surface. The C-H diamond metal-oxide-semiconductor field-effect transistor (MOSFET) has high-breakdown-voltage characteristics but exhibits normally-ON operation. For security and energy-saving purposes, we fabricated the diamond cascode using the C-H diamond p-channel field-effect transistor (p-FET) combination with the normally- OFF silicon p-FET. The diamond cascode exhibits normally- OFF characteristics and a high breakdown voltage of more than 1.7-kV. |
| Databáze: | OpenAIRE |
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