Analysis for the Physical Mechanism of the Abnormal Increase of Idsat in NMOS under HCI

Autor:	Chi-Li Chang, Bo-An Tsai, Wei-Fong Lin, Wei-Cheng Chu, Cheng-Te. Chen
Rok vydání:	2021
Předmět:	Materials science business.industry Optoelectronics business Mechanism (sociology) NMOS logic
Zdroj:	2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
DOI:	10.1109/ipfa53173.2021.9617248
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::50799cb0afe85d95823d94cf0792539d https://doi.org/10.1109/ipfa53173.2021.9617248 Zobrazit plný text záznamu