Vertical InGaAs Nanowire Array Photodiodes on Si
| Autor: | Junichi Motohisa, Kohei Chiba, Katsuhiro Tomioka, Akinobu Yoshida |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
Photocurrent
Materials science Equivalent series resistance business.industry Photovoltaic system Nanowire 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Atomic and Molecular Physics and Optics Nanowire array Electronic Optical and Magnetic Materials Photodiode law.invention 010309 optics law 0103 physical sciences Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business Biotechnology Visible spectrum Diode |
| Zdroj: | ACS Photonics. 6:260-264 |
| ISSN: | 2330-4022 |
| DOI: | 10.1021/acsphotonics.8b01089 |
| Popis: | We demonstrated vertical InGaAs nanowire (NW) array photodiodes on Si that were optically responsive to visible light (635 nm) and near-infrared light (∼1.55 μm). The vertical NWs were directly grown on Si by selective-area growth. Implementation of a heavily Sn-doped contact layer in the InGaAs NWs improved the diode characteristic because of a lower series resistance, and as a result, a photoresponsivity of 0.25 A/W was obtained at 635 nm, which was twice that before the improvement. Moreover, the photocurrent density of InGaAs–InP core–shell NWs was about 20-fold higher under illumination with light in the 1.55 μm wavelength band as a result of suppression of surface recombination. These findings are expected to be useful for NW-based photovoltaic applications for optical interconnection and Si platforms. |
| Databáze: | OpenAIRE |
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