Oxide etch behavior in a high-density, low-pressure, inductively coupled C2F6 plasma: Etch rates, selectivity to photoresist, plasma parameters, and CFx radical densities
| Autor: | Harold M. Anderson, W. Lee Perry, Karla Waters, Marcos Barela |
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| Rok vydání: | 2001 |
| Předmět: | |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:2272-2281 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.1382874 |
| Popis: | Silicon dioxide and photoresist substrates were etched in a gaseous electronics conference inductively coupled plasma reference cell using C2F6 feed gas. The power/pressure/bias parameter space of the study generated a plasma which has plasma and ion current densities, plasma potential, ion energy, and etch rate characteristics typical of commercial high density plasma (HDP) etch tools. Absolute number density trends of CF and CF2 were measured using wavelength-modulated infrared spectroscopy in situ with etch rate experiments. For nonreactive surfaces such as Si and photoresist, typical CF and CF2 number densities varied around 4.9×1012 and 4.8×1013 cm−3, respectively. Over an SiO2 surface, these values decreased and evidence of the reaction of CFx radicals with an oxide surface to form COF2 was observed. Source and bias powers were mapped into ion current densities and ion energies, and correlations were made with etch rate, which was in the 0–150 A/s range. Selectivity ranged from 1 to 6. Typical plasm... |
| Databáze: | OpenAIRE |
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