Onset of plastic relaxation in semipolar (112¯2) In Ga1−N/GaN heterostructures

Autor:	Feng Wu, Shuji Nakamura, Ingrid Koslow, Alexey E. Romanov, Po Shan Hsu, James S. Speck, Erin C. Young, Matthew T. Hardy, Steven P. DenBaars
Rok vydání:	2014
Předmět:	Diffraction Materials science Condensed matter physics Heterojunction Cathodoluminescence Slip (materials science) Chemical vapor deposition Condensed Matter Physics Alloy composition Inorganic Chemistry Crystallography Transmission electron microscopy Materials Chemistry Critical thickness
Zdroj:	Journal of Crystal Growth. 388:48-53
ISSN:	0022-0248
Popis:	The onset of plastic relaxation via misfit dislocation (MD) formation in In x Ga 1− x N layers grown by metal-organic chemical vapor deposition on the ( 11 2 ¯ 2 ) semipolar plane of GaN substrates is investigated using high-resolution X-ray diffraction, transmission electron microscopy and cathodoluminescence. The results of critical thickness calculations for MD formation as a function of In x Ga 1− x N alloy composition x are compared with experimental observations. MD generation is observed initially as a result of slip on the (0001) slip plane, and subsequently as a result of additional slip on inclined { 1 1 ¯ 00 } - type m -planes, which eventually leads to an increase in threading dislocation density.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::506cd4db10df8102860974f04e4725dd https://doi.org/10.1016/j.jcrysgro.2013.10.027 Zobrazit plný text záznamu Full Text from ScienceDirect