Autor: |
Feng Wu, Shuji Nakamura, Ingrid Koslow, Alexey E. Romanov, Po Shan Hsu, James S. Speck, Erin C. Young, Matthew T. Hardy, Steven P. DenBaars |
Rok vydání: |
2014 |
Předmět: |
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Zdroj: |
Journal of Crystal Growth. 388:48-53 |
ISSN: |
0022-0248 |
Popis: |
The onset of plastic relaxation via misfit dislocation (MD) formation in In x Ga 1− x N layers grown by metal-organic chemical vapor deposition on the ( 11 2 ¯ 2 ) semipolar plane of GaN substrates is investigated using high-resolution X-ray diffraction, transmission electron microscopy and cathodoluminescence. The results of critical thickness calculations for MD formation as a function of In x Ga 1− x N alloy composition x are compared with experimental observations. MD generation is observed initially as a result of slip on the (0001) slip plane, and subsequently as a result of additional slip on inclined { 1 1 ¯ 00 } - type m -planes, which eventually leads to an increase in threading dislocation density. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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