Polarization induced 2D hole gas in GaN/AlGaN heterostructures
| Autor: | P. Vogl, S. Hackenbuchner, Jacek A. Majewski, G. Zandler |
|---|---|
| Rok vydání: | 2001 |
| Předmět: |
Materials science
Condensed matter physics Superlattice chemistry.chemical_element Heterojunction Nitride Condensed Matter Physics Polarization (waves) Schrödinger equation Inorganic Chemistry Condensed Matter::Materials Science symbols.namesake chemistry Aluminium Materials Chemistry symbols Gan algan Poisson's equation |
| Zdroj: | Journal of Crystal Growth. 230:607-610 |
| ISSN: | 0022-0248 |
| Popis: | The generation of high density 2D hole gases is crucial for further progress in the electronic and optoelectronic nitride devices. In this paper, we present systematic theoretical studies of Mg-doped GaN/AlGaN gated heterostructures and superlattices. Our calculations are based on a self-consistent solution of the multiband k . p Schrodinger and Poisson equation and reveal that the hole 2D sheet density is mainly determined by the polarization induced interface charges. For an aluminium concentration of 30%, the induced hole density in the heterostructure can reach values up to 1.5×10 13 cm −2 . In the GaN/AlGaN superlattices, the hole sheet density increases with the superlattice period and saturates for a period of 40 nm at a value of 1.5×10 13 cm −2 . |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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