Inversion by metalorganic chemical vapor deposition from N- to Ga-polar gallium nitride and its application to multiple quantum well light-emitting diodes
| Autor: | D. M. Van Den Broeck, D. Bharrat, Salah M. Bedair, Nadia A. El-Masry, A. M. Hosalli |
|---|---|
| Rok vydání: | 2013 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) business.industry Wide-bandgap semiconductor Gallium nitride Chemical vapor deposition law.invention chemistry.chemical_compound chemistry law Polar Optoelectronics Metalorganic vapour phase epitaxy Thin film business Quantum well Light-emitting diode |
| Zdroj: | Applied Physics Letters. 103:231108 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.4841755 |
| Popis: | We demonstrate a metalorganic chemical vapor deposition growth approach for inverting N-polar to Ga-polar GaN by using a thin inversion layer grown with high Mg flux. The introduction of this inversion layer allowed us to grow p-GaN films on N-polar GaN thin film. We have studied the dependence of hole concentration, surface morphology, and degree of polarity inversion for the inverted Ga-polar surface on the thickness of the inversion layer. We then use this approach to grow a light emitting diode structure which has the MQW active region grown on the advantageous N-polar surface and the p-layer grown on the inverted Ga-polar surface. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|