Polysilicon–Oxide–Nitride–Oxide–Silicon-Type Flash Memory Using an Y[sub 2]O[sub 3] Film as a Charge Trapping Layer
| Autor: | Wen-Wei Yeh, Tung-Ming Pan |
|---|---|
| Rok vydání: | 2008 |
| Předmět: |
Materials science
Silicon business.industry General Chemical Engineering Oxide chemistry.chemical_element Yttrium Nitride Flash memory Threshold voltage chemistry.chemical_compound chemistry Electrochemistry Optoelectronics General Materials Science Charge carrier Electrical and Electronic Engineering Physical and Theoretical Chemistry business Layer (electronics) |
| Zdroj: | Electrochemical and Solid-State Letters. 11:G37 |
| ISSN: | 1099-0062 |
| DOI: | 10.1149/1.2919136 |
| Popis: | A polysilicon-oxide-nitride-oxide-silicon-type flash memory using a high-k yttrium oxide (Y 2 O 3 ) film as the trapping storage layer is developed. This high-k Y 2 O 3 charge trapping layer memory exhibited large threshold voltage shifting (memory window of 3 V), excellent data retention (charge loss of 5 and 10% measured time up to 10 4 s and recorded at room temperature and 125°C, respectively), and superior endurance characteristics (program/erase cycles up to 10 5 ) because of the higher probability for trapping the charge carrier. This film appears to be a very promising charge trapping layer for high-density, two-bit nonvolatile flash memory application. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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