Plasma atomic layer etching of GaN/AlGaN materials and application: An overview

Autor:	Lulu Guan, Xingyu Li, Dongchen Che, Kaidong Xu, Shiwei Zhuang
Rok vydání:	2022
Předmět:	Materials Chemistry Electrical and Electronic Engineering Condensed Matter Physics Electronic Optical and Magnetic Materials
Zdroj:	Journal of Semiconductors. 43:113101
ISSN:	2058-6140 1674-4926
DOI:	10.1088/1674-4926/43/11/113101
Popis:	With the development of the third generation of semiconductor devices, it is essential to achieve precise etching of gallium nitride (GaN) materials that is close to the atomic level. Compared with the traditional wet etching and continuous plasma etching, plasma atomic layer etching (ALE) of GaN has the advantages of self-limiting etching, high selectivity to other materials, and smooth etched surface. In this paper the basic properties and applications of GaN are presented. It also presents the various etching methods of GaN. GaN plasma ALE systems are reviewed, and their similarities and differences are compared. In addition, the industrial application of GaN plasma ALE is outlined.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::505398addd3fae2ed1eb568f4fa4ca52 https://doi.org/10.1088/1674-4926/43/11/113101 Zobrazit plný text záznamu