| Autor: |
David Linton, F.H. Ruddell, Harold Gamble, Vincent Fusco, M. Bain, Falah Mohammed |
| Rok vydání: |
2005 |
| Předmět: |
|
| Zdroj: |
IEEE Transactions on Electron Devices. 52:1384-1391 |
| ISSN: |
0018-9383 |
| DOI: |
10.1109/ted.2005.850684 |
| Popis: |
The design and simulation of a novel silicon Schottky diode for nonlinear transmission line (NLTL) applications is discussed in this paper. The Schottky diode was fabricated on a novel silicon-on-silicide-on-insulator (SSOI) substrate for minimized series resistance. Ion implantation technology was used as a low-cost alternative to molecular beam epitaxy to approximate the delta (/spl delta/) doping profile, which results in strong nonlinear CV characteristics. The equivalent circuit model of the Schottky diode under reverse bias conditions was extracted from the S-parameter measurement performed on the diode. The measured CV characteristics show strong nonlinearity, the junction capacitance varies from 182 to 47.5 fF as the reverse bias voltage is varied from 0 to -5 V. A parasitic inductance of 40 pH was measured for the silicon Schottky diode, which is much smaller than a comparable sized GaAs Schottky diode. This small inductance is an advantage for the silicon Schottky diode offering improvement in the silicon NLTL performance. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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