Internal quantum efficiency behavior of a‐plane and c‐plane InGaN/GaN multiple quantum well with different indium compositions

Autor:	Tsung-Shine Ko, Jenq Dar Tsay, S. C. Wang, Te Chung Wang, Hao-Chung Kuo, Run Ci Gao, Tien-Chang Lu
Rok vydání:	2008
Předmět:	Materials science Photoluminescence business.industry Multiple quantum chemistry.chemical_element Green-light Condensed Matter Physics Piezoelectricity Green emission chemistry Optoelectronics Quantum efficiency business Indium Diode
Zdroj:	physica status solidi c. 5:2161-2163
ISSN:	1610-1642 1862-6351
DOI:	10.1002/pssc.200778503
Popis:	We had investigated the potential of non-polar a-plane InGaN/GaN multiple quantum well (MQW) for high indium content blue/green emission. By comparisons of a-plane and c-plane MQW with different indium compositions, we concluded that without piezoelectric field, high indium content non-polar a-plane InGaN/GaN MQW is suitable for green light emitting diode (LED). Furthermore, similar to c-plane GaN InGaN/GaN MQW, the localized state might enhance the performance of a-plane MQW while the indium composition about 24% although the threading dislocation density (TDD) is quite high. On the other hand, the indium phase separation might also occur on a -plane InGaN/GaN MQW while the indium composition about 30% so that the photoluminescence intensity of the sample 810 °C low down and spectrum bandwidth broaden. (© 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
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