Effect of KOH Concentration on the Properties of Undoped Porous GaN on Sapphire Substrate Prepared by UV assisted Electrochemical Etching

Autor:	Azrina Arshad, Mohd Zaki Mohd Yusoff
Rok vydání:	2020
Předmět:	Materials science Chemical engineering Computer Science (miscellaneous) Sapphire substrate Electrical and Electronic Engineering Electrochemical etching Porosity
Zdroj:	International Journal of Advanced Trends in Computer Science and Engineering. 9:246-251
ISSN:	2278-3091
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::50423b220ab9fd0b7817309cd0d067b5 https://doi.org/10.30534/ijatcse/2020/4491.12020 Zobrazit plný text záznamu