Thermally stable and low trap density SiNx/AlON bi-layer structure for AlGaN/GaN MIS-HEMTs

Autor:	Shiro Ozaki, Junji Kotani, Kozo Makiyama, Naoya Okamoto, Yusuke Kumazaki, Toshihiro Ohki, Norikazu Nakamura, Yoichi Kamada, Yuichi Minoura, Atsushi Yamada, Junya Yaita
Rok vydání:	2020
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Trap density General Engineering General Physics and Astronomy Optoelectronics Algan gan Thermal stability Bi layer business
Zdroj:	Japanese Journal of Applied Physics. 59:046505
ISSN:	1347-4065 0021-4922
DOI:	10.35848/1347-4065/ab8276
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::503f5fd973803fbf3c311a233435a6ea https://doi.org/10.35848/1347-4065/ab8276 Zobrazit plný text záznamu