Formation and optical properties of CdSSe semiconductor nanocrystals in the silicate glass matrix
| Autor: | V. V. Ushakov, A. S. Aronin, V. A. Karavanskiĭ, A. A. Gippius |
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| Rok vydání: | 2009 |
| Předmět: |
Materials science
Condensed Matter::Other business.industry Annealing (metallurgy) Physics::Optics Crystal structure Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Semiconductor Absorption edge Nanocrystal Quantum dot Optoelectronics Luminescence business Electronic band structure |
| Zdroj: | Physics of the Solid State. 51:2161-2165 |
| ISSN: | 1090-6460 1063-7834 |
| DOI: | 10.1134/s106378340910028x |
| Popis: | Technological conditions providing the formation of CdSxSe1−x semiconductor crystal grains with sizes ranging from 2 to 8 nm in a silicate glass matrix have been determined. As the temperature of forming annealing increases, the size of crystal grains increases without changes in their crystal structure and composition. The observed short-wavelength shift of the optical absorption edge indicates that the quantum confinement affects the energy band structure of the nanocrystals. Intense luminescence of the samples is due to radiative transitions involving defects at the semiconductor nanocrystal-silicate matrix interface or intrinsic defects of nanocrystals. |
| Databáze: | OpenAIRE |
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