Fabrication of a Uniform Low Temperature Poly-Si TFT Array by Optimized Field Aided Lateral Crystallization
| Autor: | Kwang Jin Lee, Jaehoon Jung, Young-Bae Kim, Ji Hoon Shin, Duck Kyun Choi, Jung Sun You |
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| Rok vydání: | 2010 |
| Předmět: |
Materials science
Fabrication Renewable Energy Sustainability and the Environment business.industry Transistor Electrical engineering Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Threshold voltage Crystallinity Thin-film transistor law Electrode Materials Chemistry Electrochemistry Optoelectronics Crystallization business Current density |
| Zdroj: | Journal of The Electrochemical Society. 157:H1 |
| ISSN: | 0013-4651 |
| DOI: | 10.1149/1.3244212 |
| Popis: | In this study, a 2 in. Ni field aided lateral crystallization FALC poly-Si thin-film transistor TFT 120 240 array was fabricated at the maximum process temperature of 500°C using an optimized current density distribution design. We investigated the correlation between crystallization and transistor characteristics in terms of transistor position in the array. Because an identical current density in the channel region of each pixel transistor was favorable to achieve uniform crystallization, an optimal common electrode design was chosen via Mathcad simulation. After the crystallization process, it was confirmed that the crystallinity variation in the transistor channels agreed well with the predicted simulation results. Furthermore, the positional variation in important transistor parameters in the array showed a good match with that of crystallization. The mean threshold voltage was 5.9 V Vth = 0.2 V while the mean mobility was 92.5 cm 2 V |
| Databáze: | OpenAIRE |
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