SEM and ECC Imaging Study of Step-Bunched Structure on 4H-SiC Epitaxial Layers
| Autor: | Shinya Sato, Koji Ashida, Hiroshi Tsuge, Masashi Sonoda, Tadaaki Kaneko, Tatsuo Fujimoto, Masakazu Katsuno, Noboru Ohtani, Yuki Tabuchi |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Misorientation Scanning electron microscope Mechanical Engineering Imaging study 02 engineering and technology Electron 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Molecular physics Crystallography Mechanics of Materials 0103 physical sciences General Materials Science 0210 nano-technology Layer (electronics) Vicinal |
| Zdroj: | Materials Science Forum. 897:205-208 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.897.205 |
| Popis: | Step bunching on a vicinal 4H-SiC (0001) epitaxial layer surface was investigated using low-voltage electron scanning microscopy (LVSEM) and electron channeling contrast (ECC) imaging. LVSEM observations revealed that the step bunching resulted in the formation of atomically flat wide (~250 nm) terraces on the surface, and the terraces tended to form in pairs. The two terraces in paired terraces often showed the same electron channeling contrast as each other, and the contrast of the two terraces, either bright or dark, appeared to be determined by the orthogonal misorientation of substrates. On the basis of these results, the formation mechanism of the step-bunched structure on a vicinal 4H-SiC (0001) surface is discussed. |
| Databáze: | OpenAIRE |
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