High-Performance Partially Depleted SOI PFETs With In Situ Doped SiGe Raised Source/Drain and Implant-Free Extension
| Autor: | Anne Kimball, Ghavam G. Shahidi, Thomas N. Adam, Ali Khakifirooz, Huiming Bu, Bruce B. Doris, Pranita Kulkarni, Kangguo Cheng, Lisa F. Edge, Alexander Reznicek, Jin Cai |
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| Rok vydání: | 2011 |
| Předmět: |
Materials science
business.industry Transconductance Transistor Electrical engineering Silicon on insulator Electronic Optical and Magnetic Materials law.invention Silicon-germanium chemistry.chemical_compound chemistry Depletion region law Logic gate MOSFET Optoelectronics Field-effect transistor Electrical and Electronic Engineering business |
| Zdroj: | IEEE Electron Device Letters. 32:267-269 |
| ISSN: | 1558-0563 0741-3106 |
| Popis: | We report partially depleted silicon-on-insulator p-channel field-effect transistors fabricated with a 32-nm technology ground rule and featuring SiGe raised source/drain, SiGe channel, and implant-free extension formation process. A respectable drive current of 950 μA/μm is obtained at an OFF current of 100 nA/μm, VDD = 1V, and a contacted gate pitch of 130 nm. Furthermore, when the transistor width is scaled down to 100 nm, the saturation transconductance increases by about 15%, leading to a drive current of 1100 μA/μm. |
| Databáze: | OpenAIRE |
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