Temperature dependence of interband transition energy in InGaAsN strain-compensated quantum-well and ridge-waveguide lasers fabricated with pulsed anodic oxidation
Autor: | Ashraf Uddin, H. Jiang, S. Yuan, Y. Qu, B. Bo, Chang Liu, Jian Zhang, G. Liu, Michael C. Y. Chan |
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Rok vydání: | 2005 |
Předmět: | |
Zdroj: | Applied Physics A. 82:305-308 |
ISSN: | 1432-0630 0947-8396 |
Popis: | Ridge-waveguide InGaAsN triple-quantum-well strain-compensated lasers grown by metal organic chemical vapor deposition were fabricated with pulsed anodic oxidation. The laser’s output power reached 145 mW in continuous-wave mode at room temperature for a 4-?m -stripe-width laser. Continuous-wave single longitudinal mode operation was maintained at a high injection current level with a wavelength of 1287.3 nm at room temperature. Single longitudinal mode operation at 1317.2 nm was achieved at twice the threshold current at 100 °C. The band gap of InGaAsN in the quantum wells at different temperatures was calculated and compared to the measured temperature-dependent laser wavelength. |
Databáze: | OpenAIRE |
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