Temperature dependence of interband transition energy in InGaAsN strain-compensated quantum-well and ridge-waveguide lasers fabricated with pulsed anodic oxidation

Autor:	Ashraf Uddin, H. Jiang, S. Yuan, Y. Qu, B. Bo, Chang Liu, Jian Zhang, G. Liu, Michael C. Y. Chan
Rok vydání:	2005
Předmět:	Materials science Photoluminescence Band gap business.industry Physics::Optics General Chemistry Chemical vapor deposition Laser law.invention Longitudinal mode Wavelength law Continuous wave Optoelectronics General Materials Science business Quantum well
Zdroj:	Applied Physics A. 82:305-308
ISSN:	1432-0630 0947-8396
Popis:	Ridge-waveguide InGaAsN triple-quantum-well strain-compensated lasers grown by metal organic chemical vapor deposition were fabricated with pulsed anodic oxidation. The laser’s output power reached 145 mW in continuous-wave mode at room temperature for a 4-?m -stripe-width laser. Continuous-wave single longitudinal mode operation was maintained at a high injection current level with a wavelength of 1287.3 nm at room temperature. Single longitudinal mode operation at 1317.2 nm was achieved at twice the threshold current at 100 °C. The band gap of InGaAsN in the quantum wells at different temperatures was calculated and compared to the measured temperature-dependent laser wavelength.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4fcbacba16bc389b1877b8823fe7ec4e https://doi.org/10.1007/s00339-005-3294-1 Zobrazit plný text záznamu Full text from SpringerLink