Electrical characterization ofp‐type ZnSe:N and Zn1−xMgxSySe1−y:N thin films

Autor:	Kevin W. Haberern, P. M. Mensz, C. Ponzoni, S. Herko, J. M. Gaines
Rok vydání:	1993
Předmět:	Electron mobility Physics and Astronomy (miscellaneous) Chemistry Electrical resistivity and conductivity Hall effect Inorganic chemistry Analytical chemistry chemistry.chemical_element Activation energy Thin film Nitrogen Characterization (materials science) Magnetic field
Zdroj:	Applied Physics Letters. 63:2800-2802
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.110339
Popis:	Differential van der Pauw–Hall effect and resistivity measurements have been performed to determine the concentration and mobility of free holes in nitrogen doped ZnSe and Zn1−xMgxSySe1−y thin films. Hall data taken between 120 and 300 K, with magnetic fields up to 4 kG yielded an activation energy of the nitrogen acceptors in ZnSe:N of 104 meV. Donor compensation in the ZnSe:N samples was negligible. Compared with ZnSe:N, samples of Zn1−xMgxSySe1−y:N, exhibited a significantly lower value of room‐temperature mobility of holes, and fast‐carrier freeze‐out at relatively high temperature, approximately T=200 K.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::4fc9d307f59ce2555c4938c54b27fa6c https://doi.org/10.1063/1.110339 Zobrazit plný text záznamu