Improved breakdown voltage and impact ionization in InAlAs∕InGaAs metamorphic high-electron-mobility transistor with a liquid phase oxidized InGaAs gate
| Autor: | Po Wen Sze, Nan Ying Yang, Yeong-Her Wang, Kuan Wei Lee, Mau-Phon Houng |
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| Rok vydání: | 2005 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) business.industry Transistor Gate dielectric Analytical chemistry Oxide Time-dependent gate oxide breakdown law.invention Impact ionization chemistry.chemical_compound chemistry Gate oxide law Breakdown voltage Optoelectronics business Leakage (electronics) |
| Zdroj: | Applied Physics Letters. 87:263501 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.2151252 |
| Popis: | The In0.52Al0.48As∕In0.53Ga0.47As metal-oxide-semiconductor metamorphic high-electron-mobility transistors (MOS-MHEMTs) with a thin InGaAs native oxide layer (∼10–15nm) are demonstrated. The gate dielectric is directly obtained by oxidizing InGaAs material in a liquid phase solution. As compared to its counterpart MHEMTs, the MOS-MHEMTs have larger gate swing voltages, higher gate-to-drain breakdown voltages, and lower gate leakage currents with the suppressed impact ionization effect due to its higher barrier height. |
| Databáze: | OpenAIRE |
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