Analysis of Compensation Effects in Aluminum-Implanted 4H-SiC Devices
| Autor: | Mattias Tschiesche, Anton J. Bauer, J. Weiße, Martin Hauck, Tomasz Sledziewski, Michael Krieger, Heinz Mitlehner, Tobias Erlbacher, Lothar Frey |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry Mechanical Engineering chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Compensation (engineering) Admittance spectroscopy chemistry Mechanics of Materials Aluminium Hall effect 0103 physical sciences Optoelectronics General Materials Science Ionization energy 0210 nano-technology business |
| Zdroj: | Materials Science Forum. 924:184-187 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.924.184 |
| Popis: | In this work, we analyze compensating defects which are formed after implantation of aluminum (Al) into n-type 4H-SiC epitaxial layers and subsequent thermal annealing. These defects reduce the expected free charge carrier density by 84% for a low doped layer with [Al]impl≈ 9·1016cm-3and by 27 % for a high doped layer with [Al]impl≈ 2·1019cm-3. Furthermore, an electrical activation ratio of implanted aluminum ions of 100 % is calculated. The ionization energy of implanted aluminum as measured by Hall effect and admittance spectroscopy ranges from 101 meV to 305 meV depending on the doping concentration. |
| Databáze: | OpenAIRE |
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